- All sections
- H - Electricity
- H10B - Electronic memory devices
- H10B 43/27 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
Patent holdings for IPC class H10B 43/27
Total number of patents in this class: 1324
10-year publication summary
0
|
0
|
0
|
0
|
3
|
11
|
209
|
416
|
429
|
255
|
2015 | 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 |
Principal owners for this class
Owner |
All patents
|
This class
|
---|---|---|
Samsung Electronics Co., Ltd. | 131630 |
292 |
Kioxia Corporation | 9847 |
233 |
Micron Technology, Inc. | 24960 |
174 |
SK Hynix Inc. | 11030 |
154 |
Yangtze Memory Technologies Co., Ltd. | 1940 |
146 |
Sandisk Technologies LLC | 5684 |
85 |
Lodestar Licensing Group LLC | 583 |
46 |
Applied Materials, Inc. | 16587 |
22 |
Taiwan Semiconductor Manufacturing Company, Ltd. | 36809 |
22 |
Macronix International Co., Ltd. | 2562 |
21 |
Sunrise Memory Corporation | 192 |
15 |
IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) | 1115 |
14 |
Semiconductor Energy Laboratory Co., Ltd. | 10902 |
10 |
JPMorgan Chase Bank, National Association | 10964 |
10 |
Institute of Microelectronics, Chinese Academy of Sciences | 1290 |
10 |
Intel Corporation | 45621 |
6 |
Tokyo Electron Limited | 11599 |
6 |
Monolithic 3D Inc. | 270 |
6 |
Lam Research Corporation | 4775 |
5 |
Intel NDTM US LLC | 373 |
5 |
Other owners | 42 |